to ? 92 1.emitter 2.base 3.collector jiangsu changjiang electron ics technology co., lt d to-92 plastic-encapsulate tr ansistors BC212 transistor (pnp) features z general purpose switch ing and amplification. maximum ra tings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) pa rameter symbol test conditions min typ max unit collector-base b reakdown voltage v (br)cbo i c = -0.01ma,i e =0 -60 v collector-emitter br eakdown voltage v (br)ceo i c =-2ma,i b =0 -50 v emitter-base b reakdown voltage v (br)ebo i e =-0.01ma,i c =0 -5 v collector cut-o ff current i cbo v cb =-30v,i e =0 -15 na collector cut-o ff current i ceo v ce =-30v,i b =0 -0.1 a emitter cut-off current i ebo v eb =-4v,i c =0 -15 na BC212 140 600 BC212b 140 400 dc current ga in h fe v ce =-5v, i c =-2ma BC212c 350 600 collector-emitter satur ation voltage v ce(sat) i c =-100ma,i b =-5ma -0.6 v base-emitter satur ation voltage v be(sat) i c =-100ma,i b =-5ma -1.2 v base-emitter voltage v be v ce =-5v, i c =-2ma -0.7 2 v trans ition frequency f t v ce =-5v,i c =-10ma,f=100mhz 200 mhz collector ou tput capacitance c ob v cb =-10v,i c =0, f=1mhz 6 pf symbol parameter va lue unit v cbo collector-base vo ltage -60 v v ceo collector-emitter voltage -50 v v ebo emitter-base voltage -5 v i c collector current -contin uous -0.1 a p c collector power dissip ation 0.35 w r ja thermal resistance from jun ction to ambient 357 /w t j junction temperature 150 t stg storage tempe rature -55~+150 www.cj-elec.com 1 c, dec ,2015
min max min max a 3 .300 3.700 0.130 0.146 a1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 d 4. 300 4.700 0.169 0.185 d1 3.430 0.135 e 4.300 4.700 0.169 0.185 e e1 2.440 2.640 0.096 0.104 l 14.100 14.500 0.555 0.571 1.600 0.063 h 0.000 0.380 0.000 0.015 symbol dimensions in millimeters dimensions in inches 1.270 typ 0.050 typ to-92 package outline dimensions to-92 suggested pad layout www.cj-elec.com 2 c , dec ,2015
to-92 7 d s h d q g 5 h h o z z z f m h o h f f r p 3 c,dec,2015
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